S10077 features l pixel pitch: 14 ? pixel height: 50 ? l number of pixels: 1024 ch l single power supply operation: 3.3 to 5 v l on-chip charge amplifier with excellent input/output characteristics l built-in timing generator allows operation with only start and clock pulse inputs l video data rate: 1 mhz max. l spectral response range: 400 to 1000 nm l digital output l 8-bit/10-bit switchable adc l simultaneous all-pixel integration and variable integration time function l low power consumption applications l analytical instrument l position detection l image reading image sensor cmos linear image sensor digital output, built-in 8/10-bit ad converter, single power supply operation S10077 is a cmos linear image sensor designed for image input applications. the signal processing circuit has a charge amplifie r with excellent input/output characteristics. the circuit also includes a 8-bit/10-bit ad converter. 1 absolute maximum ratings parameter symbol value unit supply voltage vdd -0.3 to +6 v ad mode selection voltage vsel -0.3 to +6 v clock pulse voltage v (clk) -0.3 to +6 v start pulse voltage v (st) -0.3 to +6 v operating temperature * 1 topr -5 to +50 c storage temperature ts t g -10 to +60 c *1: no condensation shape specifications parameter specification unit number of pixels 1024 - pixel pitch 14 m pixel height 50 m active area length 14.336 mm window material tenpax -
cmos linear image sensor S10077 2 recommended terminal voltage parameter symbol min. typ. max. unit supply voltage vdd 3.3 5 5.25 v 10-bit vdd - 0.25 vdd vdd + 0.25 v ad mode selection voltage 8-bit vsel 0 - 0.4 v high vdd - 0.25 vdd vdd + 0.25 v clock pulse voltage low v (clk) 0-0.4v high vdd - 0.25 vdd vdd + 0.25 v start pulse voltage low v (st) 0 - 0.4 v electrical characteristics (ta=25 c ) parameter symbol min. typ. max. unit 10-bit 1 - 6 clock pulse frequency 8-bit f (clk) 1-12 mhz video data rate vr - f (clk)/12 - hz electrical and optical characteristics (ta=25 c ) parameter symbol min. typ. max. unit spectral response range 400 to 1000 nm peak sensitivity wavelength p - 700 - nm photo sensitivity * 2 res - 42 - v/jcm 2 photo response non-uniformity * 3 * 4 prnu - - 10 % 8-bit * 5 - 30 - vdd=3.3 v 10-bit * 6 - 30 - 8-bit * 5 - 70 - power consumption vdd=5 v 10-bit * 6 p - 70 - mw 8-bit * 5 255 - - vdd=3.3 v 10-bit * 6 1023 - - 8-bit * 5 255 - - saturation output voltage * 7 vdd=5 v 10-bit * 6 vsat 1023 - - digit 8-bit * 5 11 29 41 vdd=3.3 v 10-bit * 6 44 116 164 8-bit * 5 7 19 27 offset output voltage vdd=5 v 10-bit * 6 vo 28 76 108 digit 8-bit * 5 - 0.04 0.6 vdd=3.3 v 10-bit * 6 - 0.16 2.4 8-bit * 5 - 0.03 0.6 dark output * 8 vdd=5 v 10-bit * 6 vd - 0.12 2.4 digit 8-bit * 5 - 0.7 2 vdd=3.3 v 10-bit * 6 - 2.8 8 8-bit * 5 - 0.7 2 readout noise vdd=5 v 10-bit * 6 nr - 2.8 8 digit *2: =700 nm *3: photo response non-uniformity (prnu) is measured under the condition that the device is uniformly illuminated by light whic h is 50% of the saturation exposure level, using 1022 pixels excluding the pixels at both ends. prnu is defined as follows: prnu= ? x/x 100 (%) w here x is the average output of all pixels and ? x is the difference between the maximum or minimum output and x with the offset subtracted. *4: measured with a tungsten lam p of 2856 k *5: f (clk)=12 mhz, t2 (st)= 13200 clk=1.1 ms *6: f (clk)=6 mh z, t2 (st)= 13200 clk=2.2 ms *7: absolute value with respect to 0 v *8: output difference from vo when the integration time is set to 10 ms. spectral response (typical example) 80 200 600 1000 400 800 1200 wavelength (nm) relative sensitivity (%) 0 60 100 40 20 (ta=25 ?c) kmpdb0229eb
cmos linear image sensor S10077 3 ad converter specifications (ta=25 c) parameter symbol specification unit digital output format - serial output - 10-bit mode 10 resolution * 9 8-bit mode reso 8 bit vdd=5 v 0 to 3.3 conversion voltage range * 10 vdd=3.3 v - 0 to 2.2 v *9: vsel=5 v (10-bit mode), 0 v (8-bit mode) *10: digital output is available from msb as serial output. 10-bit mode: d9 to d0 8-bit mode: d7 to d0 timing chart parameter symbol min. typ. max. unit clock pulse rise and fall time tr (clk), tf (clk) 0 20 30 ns start pulse time cycle t2 (st) 12339 - 120000 clk start pulse low time t3 (st) 45 - - clk start pulse high time * 11 t4 (st) 6000 - - clk start pulse rise and fall time tr (st), tf (st) 0 20 30 ns *11: signal charge integration time equals the high period of start pulse + 7 clk cycles. the shift register operation starts at the rise of clk pulse immediately after st pulse sets to low. integration time can be changed by changing the high-to-low ratio of st pulses. 012345 10 7 15 20 25 34.5 33 45 57 41.5 46.5 53.5 22 ao1 34 33 34 42 d7 d0 46 54 d7 d0 45 57 21 ao2 46 ao3 ao4 30 35 40 45 50 55 clk st eos ao trig (a) do trig (d) eoc t3 (st) t4 (st) t2 (st) do1 do2 t1 (clk) 8-bit mode in the neighborhood of start pixel in the neighborhood of last pixel clk st tf (clk) tr (clk) t1 (clk) tf (st) tr (st) kmpdc0224ea 12322 12281.5 12286.5 12293.5 12298.5 12305.5 12310.5 12317.5 12285 12297 12309 12320 12286 ao1023 12297 12282 d0 12286 d7 12294 d0 12298 d7 12306 d0 12310 d7 12318 d0 12285 clk st eos ao trig (a) do trig (d) eoc t4 (st) t2 (st) 12298 ao1024 do1022 do1023 do1024 kmpdc0225ea note) when using analog output ao, read the ao output at the falling edge of trig (a). when using digital output do, read the do output at the falling edge of trig (d).
cmos linear image sensor S10077 4 012345 10 7 15 20 25 34.5 43.5 46.5 55.5 33 45 57 22 ao1 34 33 34 44 46 56 d9 d0 d9 d0 45 57 21 ao2 46 ao3 ao4 30 35 40 45 50 55 clk st eos ao trig (a) do trig (d) eoc t3 (st) t4 (st) t2 (st) do1 do2 t1 (clk) kmpdc0226ea 10-bit mode in the neighborhood of start pixel in the neighborhood of last pixel 12322 12283.5 12286.5 12295.5 12298.5 12307.5 12310.5 12319.5 12285 12297 12309 12320 12297 12284 d0 12286 d9 12296 d0 12298 d9 12308 d0 12310 d9 12320 d0 12285 12286 12298 clk st eos ao trig (a) do trig (d) eoc t4 (st) t2 (st) ao1023 ao1024 do1022 do1023 do1024 dimensional outline (unit: mm, tolerance unless otherwise noted: 0.1) active area 14.336 41.6 0.2 package: lcp (liquid crystalline polymer) 2.54 0.51 27.94 6.83 0.2 7.168 0.3 9.1 0.1 10.2 0.5 10 0.3 4.23 0.4 4.0 0.5 active area 50 m 1.4 0.15 3.0 1 ch 1 24 12 13 0.20 pin connection 1 1 2 3 4 5 6 7 8 9 10 11 12 nc d. trig do a. trig ao nc nc vdd vss nc nc nc nc st clk vdd vss vsel nc eoc eos nc nc nc 24 23 22 21 20 19 18 17 16 15 14 13 1024 kmpda0202eb kmpdc0231ea
cmos linear image sensor S10077 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 6 hamamatsu photonics k.k. cat. no. kmpd1088e02 sept. 2006 dn 5
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precautions during use (1) electrostatic countermeasures this device has a built-in protection circuit against static electrical charges. however, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static dis- charges. also protect this device from surge voltages which might be caused by peripheral equipment. (2) incident window if dust or dirt gets on the light incident window, it will show up as black blemishes on the image. when cleaning, avoid rubbin g the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. then blow compressed air onto the window surface so that no spot or stain remains. (3) soldering to prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. soldering should be performed within 5 seconds at a soldering temperature below 260 c.
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